Semiconductor memory and redundancy repair method

Details Semiconductor memory and redundancy repair method Semiconductor memory and redundancy repair method

2008-04-22

2008-04-22

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S225700

Reexamination Certificate

active

07362628

ABSTRACT:
In a semiconductor memory in which redundancy repair is carried out on a block basis, when a defective block of memory cells is replaced by a first redundant block, the adjacent normal block of memory cells closest to the defect, or a part of that normal block, is also replaced by memory cells in a second redundant block. This repair strategy provides a simple way to isolate a defective memory cell so that the defect does not affect non-replaced memory cells.

REFERENCES:
patent: 5179536 (1993-01-01), Kasa et al.
patent: 5281868 (1994-01-01), Morgan
patent: 5379259 (1995-01-01), Fujita
patent: 5673227 (1997-09-01), Engles et al.
patent: 6134142 (2000-10-01), Hirano
patent: 6853596 (2005-02-01), Cheung
patent: 7142471 (2006-11-01), Fasoli et al.
patent: 11-273392 (1999-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory and redundancy repair method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory and redundancy repair method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory and redundancy repair method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2748320