Semiconductor memory and method of producing the same

Details Semiconductor memory and method of producing the same Semiconductor memory and method of producing the same

1987-08-03

1990-06-26

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 234, 357 55, 357 56, 357 59, 365149, 365184, 365185, H01L 2978

Patent

active

049376411

ABSTRACT:
The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.

REFERENCES:
patent: 4434433 (1984-02-01), Nishizawa
patent: 4462040 (1984-07-01), Ho et al.

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