Semiconductor memory and method of producing the same

Static information storage and retrieval – Systems using particular element – Flip-flop

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365189, G11C 1140

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active

045258112

ABSTRACT:
A static RAM using a flip-flop circuit as a memory cell is disclosed. The gate oxide film of the MOS transistor for selecting the memory cell is thicker than the gate oxide film of the MOS transistor included in the peripheral circuit of the memory matrix.

REFERENCES:
IEEE Journal of Solid-State Circuits vol. SC-14, No. 2, pp. 482-485, Apr. 1979.

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