Semiconductor memory and method of manufacturing the same

Details Semiconductor memory and method of manufacturing the same Semiconductor memory and method of manufacturing the same

1991-01-28

1993-02-16

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257385, H01L 2968, H01L 2978, H01L 2992

Patent

active

051875667

ABSTRACT:
In a semiconductor memory of the invention, the source or drain of a transfer gate MOS transistor is electrically connected to a charge storage first conductive layer through a third conductive layer.

REFERENCES:
patent: 4686552 (1987-08-01), Teng et al.
patent: 4785337 (1988-11-01), Kennedy
patent: 4786954 (1988-11-01), Morie et al.
patent: 4801988 (1989-01-01), Kenny
patent: 4888820 (1989-12-01), Chen et al.

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