Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-28
1998-02-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257307, 257309, H01L 27108
Patent
active
057147809
ABSTRACT:
A semiconductor memory includes a semiconductor substrate, a transistor having a gate pole, a source area, and a drain area formed on the semiconductor substrate, an insulation layer formed on a surface of the transistor, the insulation layer having a contact hole with a round upper part, the contact hole exposing the source area of the transistor, and a capacitor storage node having a first conduction layer and a second conduction layer, wherein the first conduction layer is formed inside the contact hole and along the round upper part of the contact hole on the insulation layer and extended up to a preset height, the second conduction layer is formed over the first conduction layer, the second conduction layer having a first part laying on the first conduction layer and a curved second part connected to a first end of the first part, the second part extending above the first part, thus forming a curved internal space between the first part and the second part.
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Crane Sara W.
LG Semicon Co. Ltd.
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