Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-10-10
2006-10-10
Mai, Son (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S189090, C365S189110, C365S211000
Reexamination Certificate
active
07120074
ABSTRACT:
A semiconductor memory includes storage cells (2) that have storage capacitors and transistors with an electrode, which is electrically biasable with two different electrical potentials (V1,V2) in order to open and close the transistor. The electrode potential (V2) intended for the off state of the transistor is a temperature-dependent potential, the value of which is controlled temperature-dependently by the semiconductor memory (1) so that the second electrical potential (V2) becomes more different from the first electrical potential (V1) as the temperature (T) increases.
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Benzinger Herbert
Dobler Manfred
Kliewer Joerg
Proell Manfred
Infineon - Technologies AG
Slater & Matsil L.L.P.
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