Semiconductor memory and method for manufacturing the same

Details Semiconductor memory and method for manufacturing the same Semiconductor memory and method for manufacturing the same

2006-07-31

2008-10-21

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257SE29309, C257SE21180

Reexamination Certificate

active

07439577

ABSTRACT:
A semiconductor memory is provided with memory cells including bit lines made of a diffusion layer formed in a semiconductor substrate, charge-trapping gate insulating films formed between the bit lines and word lines formed on the gate insulating films. An interlayer insulating film is formed over the memory cells and bit line contact plugs are formed in the interlayer insulating film to be connected to the bit lines. Further, a light blocking film is formed on at least part of the interlayer insulating film covering the memory cells and part of the light blocking film formed on the interlayer insulating film extends from the surface to the inside of the interlayer insulating film in the neighborhood of the bit line contact plugs.

REFERENCES:
patent: 6828625 (2004-12-01), Bloom et al.
patent: 6833581 (2004-12-01), Hui et al.
patent: 2004/0191989 (2004-09-01), Ngo et al.
patent: 2006/0214218 (2006-09-01), Shishido et al.

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