Semiconductor memory and method for manufacturing the same

Details Semiconductor memory and method for manufacturing the same Semiconductor memory and method for manufacturing the same

2008-01-15

2008-01-15

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S200000

Reexamination Certificate

active

07319628

ABSTRACT:
A semiconductor memory includes a plurality of memory portions; and a plurality of spare memory portions. The memory portion includes: a main cell array which includes memory cells, a first reference cell which stores a first reference data in a nonvolatile state, and a first sense amplifier which reads a first state of the memory cell based on the first state and a second state of the first reference cell. The memory cell stores data in a nonvolatile state. The spare memory portion includes: a spare cell array which includes spare cells as spares of the memory cells, a second reference cell which stores a second reference data in a nonvolatile state, and a second sense amplifier which reads a third state of the spare cell based on the third state and a fourth state of the second reference cell. The memory portion having a defect on the first reference cell is replaced with the spare memory portion.

REFERENCES:
patent: 4817056 (1989-03-01), Furutani et al.
patent: 4849938 (1989-07-01), Furutani et al.
patent: 6243306 (2001-06-01), Kirihata
patent: 2001/0048625 (2001-12-01), Patti et al.
patent: 2004/0017718 (2004-01-01), Ooishi
patent: 2004/0037112 (2004-02-01), Ooishi
patent: 2004/0165419 (2004-08-01), Tsuji
patent: 2001-184858 (2001-07-01), None

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