Semiconductor memory and method for manufacturing the same

Details Semiconductor memory and method for manufacturing the same Semiconductor memory and method for manufacturing the same

2011-03-22

2011-03-22

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002

Reexamination Certificate

active

07910914

ABSTRACT:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.

REFERENCES:
patent: 5599724 (1997-02-01), Yoshida
patent: 5707885 (1998-01-01), Lim
patent: 2004/0124407 (2004-07-01), Kozicki et al.
patent: 2004/0130939 (2004-07-01), Morikawa
patent: 2004/0213044 (2004-10-01), Seyyedy et al.
patent: 2004/0245547 (2004-12-01), Stipe
patent: 2005/0035429 (2005-02-01), Yeh et al.
patent: 2005/0201182 (2005-09-01), Osada et al.
patent: 2005/0243633 (2005-11-01), Symanczyk
patent: 2006/0050547 (2006-03-01), Liaw et al.
patent: 2006/0197115 (2006-09-01), Toda
patent: 2008/0217600 (2008-09-01), Gidon
patent: 2003-78044 (2003-03-01), None
U.S. Appl. No. 12/562,402, filed Sep. 18, 2009, Tanaka, et al.
U.S. Appl. No. 12/132,181, filed Jun. 3, 2008, Tanaka, et al.
Tetsuo Endoh, et al., “Novel Ultrahigh-Density Flash Memory With a Stacked-Surrounding Gate Transistor (S-SGT) Structured Cell”, IEEE Transactions on Electron Devices, vol. 50, No. 4, Apr. 2003, pp. 945-951.
U.S. Appl. No. 12/408,249, filed Mar. 20, 2009, Tanaka, et al.
U.S. Appl. No. 12/504,959, filed Jul. 17, 2009, Tanaka, et al.

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