Semiconductor memory and manufacturing method thereof

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S189070, C365S201000, C365S203000

Reexamination Certificate

active

07903484

ABSTRACT:
A semiconductor memory is provided which performs redundancy on a memory cell by a given bit unit, the semiconductor memory includes: a comparator circuit that compares an input address and a redundancy address; a judgment circuit that judges whether to perform the redundancy based on a compared result, wherein the judgment circuit outputs a plurality of redundancy judgment signals that indicates whether to perform redundancy for each portion obtained by dividing the given bit unit by n which is an integer equal to or greater than two.

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patent: 5907515 (1999-05-01), Hatakeyama
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patent: 6901015 (2005-05-01), Shinohara
patent: 7248514 (2007-07-01), Nishihara et al.
patent: 2004/0017703 (2004-01-01), Shinohara
patent: 3-37900 (1991-02-01), None
patent: 11-176188 (1999-07-01), None
patent: 2003-168299 (2003-06-01), None

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