Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257S303000, C257S316000, C257S330000
Reexamination Certificate
active
07135726
ABSTRACT:
A semiconductor memory comprises: a fist conductivity type semiconductor substrate and one or more memory cells constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein at least one of said one or more memory cells is electrically insulated from the semiconductor substrate.
REFERENCES:
patent: 4434433 (1984-02-01), Nishizawa
patent: 5386132 (1995-01-01), Wong
patent: 5929477 (1999-07-01), McAllister Burns, Jr. et al.
patent: 5990509 (1999-11-01), Burn, Jr. et al.
patent: 6107670 (2000-08-01), Masuda
patent: 6114767 (2000-09-01), Nagai et al.
patent: 6387757 (2002-05-01), Chu et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6483136 (2002-11-01), Yoshiba et al.
patent: 6501125 (2002-12-01), Kobayashi
patent: 6593231 (2003-07-01), Endoh et al.
patent: 6727544 (2004-04-01), Endoh et al.
patent: 6750110 (2004-06-01), Derderian
patent: 6870215 (2005-03-01), Endoh et al.
patent: 2002/0036308 (2002-03-01), Endoh et al.
patent: 2002/0195668 (2002-12-01), Endoh et al.
patent: 2004/0238879 (2004-12-01), Endoh et al.
patent: 0 924 766 (1999-06-01), None
patent: 04-079369 (1992-03-01), None
patent: 07-235649 (1995-09-01), None
European Search Report dated Nov. 21. 2005.
Endoh Tetsuo
Masuoka Fujio
Takeuchi Noboru
Tanigami Takuji
Yokoyama Takashi
Jackson Jerome
Masuoka Fujio
Nguyen Joseph
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor memory and its production process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory and its production process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory and its production process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3683915