Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06870215
ABSTRACT:
A semiconductor memory comprises: a first conductivity type semiconductor substrate and memory cells each constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein the memory cells are disposed in series, and the island-like semiconductor layer on which the memory cells are disposed has cross-sectional areas in a horizontal direction which vary stepwise.
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Endoh Tetsuo
Kinoshita Kazushi
Masuoka Fujio
Sato Kota
Takeuchi Noboru
Fourson George
Garcia Joannie Adelle
Masuoka Fujio
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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