Semiconductor memory and its driving method

Details Semiconductor memory and its driving method Semiconductor memory and its driving method

2006-01-17

2006-01-17

Nelms, David (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S072000, C365S189070, C365S207000

Reexamination Certificate

active

06987687

ABSTRACT:
A ferroelectric memory of a 1T/1C type has a pair of dummy memory cells DMC2n−1 and DMC2n. Different information have been stored in the dummy memory cells. When the information is read, out from each dummy memory cell, a potential Va is developed on a bit line BL2n−1, a potential Vb is developed on an adjacent bit line BL2n. Since the bit lines BL2n−1 and BL2nhave the same capacitance, a potential Vave of each bit line which was short-circuited by a short-circuit portion s2ais equal to a just intermediate value (Va+Vb)/2 of the potentials Va and Vb. The potential Vave is applied to sense amplifiers SAn−1 and SAn as a reference potential.

REFERENCES:
patent: 5022009 (1991-06-01), Terada et al.
patent: 5297077 (1994-03-01), Imai et al.
patent: 5517445 (1996-05-01), Imai et al.
patent: 5615145 (1997-03-01), Takeuchi et al.
patent: 5694353 (1997-12-01), Koike
patent: 5926413 (1999-07-01), Yamada et al.
patent: 6151242 (2000-11-01), Takashima
patent: 6154402 (2000-11-01), Akita
patent: 6154405 (2000-11-01), Takemae et al.
patent: RE36993 (2000-12-01), Takashima et al.
patent: 6407943 (2002-06-01), Choi et al.
patent: 07-093978 (1995-04-01), None

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