Semiconductor memory and FBC memory cell driving method

Details Semiconductor memory and FBC memory cell driving method Semiconductor memory and FBC memory cell driving method

2006-06-06

2006-06-06

Tran, Michael t. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S189090

Reexamination Certificate

active

07057926

ABSTRACT:
A semiconductor memory comprises a semiconductor substrate including a semiconductor film on a first insulating film; a memory cell that stores data by charging or discharging a body region formed in said semiconductor film, the memory cell including a source layer on one side of said body region and a drain layer on another side of said body region; a memory cell array in which a plurality of said memory cells are arranged in a matrix; a second insulating film provided on said body region of said memory cell; a first word line provided on said second insulating film; a bit line connected to the drain layer of said memory cell, and having a reference potential when said memory cell is in a data retaining state; a source line connected to the source layer of said memory cell, and having the reference potential; and a second word line buried in said first insulating film, and provided below said body region of said memory cell, wherein a potential VBWLHof said second word line when said memory cell is in the data retaining state is closer to said reference potential than a potential VBWLLof said second word line when a data read/write operation is executed.

REFERENCES:
patent: 6617651 (2003-09-01), Ohsawa
patent: 6980461 (2005-12-01), Portmann et al.
patent: 2004/0080481 (2004-04-01), Yamazaki et al.
patent: 2005/0094334 (2005-05-01), Kitano

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