Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-13
2009-12-08
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27104, C365S145000
Reexamination Certificate
active
07629635
ABSTRACT:
A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.
REFERENCES:
patent: 6150184 (2000-11-01), Evans et al.
patent: 2003-332538 (2003-11-01), None
patent: 2003-332538 (2003-11-01), None
Kaibara Kazuhiro
Kato Yoshihisa
Koyama Shinzo
Budd Paul A
Jackson, Jr. Jerome
McDermott Will & Emery LLP
Panasonic Corporation
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