Semiconductor memory and driving method for the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27104, C365S145000

Reexamination Certificate

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07629635

ABSTRACT:
A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.

REFERENCES:
patent: 6150184 (2000-11-01), Evans et al.
patent: 2003-332538 (2003-11-01), None
patent: 2003-332538 (2003-11-01), None

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