Semiconductor memory

Details Semiconductor memory Semiconductor memory

1992-12-16

1995-04-11

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365185, 365210, 365207, 257315, 257316, 257320, G11C 1300

Patent

active

054065143

ABSTRACT:
The address gate electrode of two nonvolatile split gate memory cells are arranged horizontally on the opposite sides of a bit line. The address gate electrode of the first memory cell is nearer to the bit line than the memory gate electrode of the same nonvolatile split gate memory cell. The memory gate electrode of the second nonvolatile split gate memory cell is nearer to the bit line than the address gate electrode of the second nonvolatile split gate memory cell.

REFERENCES:
patent: 5021847 (1991-06-01), Eitan et al.
Takaai Nozaki et al.--A 1 Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application, IEEE Journal of Solid-State Circuits, vol. 26, No. 4, Apr. 1991.

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