Semiconductor memory

Details Semiconductor memory Semiconductor memory

1992-02-14

1994-02-15

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Erase

365185, 365201, 36523006, 365900, G11C 700, G11C 1600

Patent

active

052873188

ABSTRACT:
In a flash-type electrically erasable programmable read-only memory (EEPROM), the erasure block decoder provided in the row decoder outputs a signal for simultaneously driving half the erasure line drivers in the erasure line driver array, or a signal for simultaneously driving the other half of the erasure line drivers in the erasure line driver array, according to an externally applied address signal. Therefore, the erasure operation test of all the blocks corresponding one-to-one to the erasure line drivers can be completed in two erasure operations, one for each corresponding half of the memory.

REFERENCES:
patent: 4903236 (1990-02-01), Nakayama et al.
patent: 5060195 (1991-10-01), Gill et al.
patent: 5095461 (1992-03-01), Miyakawa et al.

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