Semiconductor memory

Details Semiconductor memory Semiconductor memory

1998-08-18

2000-04-11

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257758, H01L 27108

Patent

active

060491027

ABSTRACT:
In a semiconductor memory having bit lines 10 for data input/output for a memory cell formed at the surface of a semiconductor substrate 1, grooves 19 extending along the direction of the wiring of the bit lines 10 are formed at an oxide film 18 with the bit lines 10 provided connected to the grooves 19. Since the bit lines 10 are made to connect to the grooves 19, the bit lines 10 are firmly secured to the oxide film 18. Thus, the bit lines 10 do not move even when stress is applied to their side surfaces during a heat treatment.

REFERENCES:
patent: 4905068 (1990-02-01), Satoh et al.
patent: 5384287 (1995-01-01), Fukase
patent: 5534463 (1996-07-01), Lee et al.
patent: 5659201 (1997-08-01), Wollesen
patent: 5684315 (1997-11-01), Uchiyama et al.
patent: 5696406 (1997-12-01), Ueno

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