Semiconductor memory

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 55, 365178, 365186, G11C 1140

Patent

active

041562895

ABSTRACT:
A semiconductor memory has at least one V-MOS transistor which includes a trench and a storage capacitor. A semiconductor substrate is doped with concentration centers of a first conductivity type and has a buried layer which is doped with concentration centers of a second conductivity type opposite to the first conductivity type. At least two additional layers are divided by the trench and have alternately differing conductivity types, the two additional layers and the buried layer being produced by diffusion and/or implantation.

REFERENCES:
patent: 4003036 (1977-01-01), Jenne

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1043963

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.