Semiconductor memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S321000, C257S324000

Reexamination Certificate

active

11078647

ABSTRACT:
A non-volatile semiconductor memory (30) comprising a semiconductor substrate (1) and a plurality of memory cells (19) and methods for manufacturing such a memory is provided. Each memory cell (19) comprises a charge-trapping element (5), a gate stack (20), nitride spacers (10) and electrically insulating elements (21). The charge-trapping element (5) is arranged on the semiconductor substrate (1) and comprises a nitride layer (3) sandwiched between a bottom oxide layer (2) and a top oxide layer (4), the charge-trapping element (5) having two lateral sidewalls (24) opposed to one another. The gate stack (20) is arranged on top of the charge-trapping element (5), the gate stack having two lateral sidewalls (25) opposing one another. The electrically insulating elements (21) are disposed at opposing sidewalls (24) of the charge-trapping element (5) and cover the sidewalls (24) of the charge-trapping element (5). The nitride spacers (10) cover the electrically insulating elements (21) and are arranged on opposing sidewalls (25) of the gate stack (20) and on the electrically insulating elements (21).

REFERENCES:
patent: 6232179 (2001-05-01), Sato
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6475857 (2002-11-01), Kim et al.
patent: 6686242 (2004-02-01), Willer et al.
patent: 6960482 (2005-11-01), Matsumoto et al.
patent: 2001/0016406 (2001-08-01), Pan et al.
patent: 2006/0086970 (2006-04-01), Kim
patent: 1395322 (2003-02-01), None
patent: 1441480 (2003-09-01), None
patent: 1783513 (2006-06-01), None

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