Semiconductor memory

Details Semiconductor memory Semiconductor memory

2007-02-20

2007-02-20

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S185200, C365S210130

Reexamination Certificate

active

11154797

ABSTRACT:
The semiconductor memory has word lines; normal memory cells each having a storage capacitor; normal bit lines connected to the normal memory cells; a reference memory cell having a capacitor storing prescribed data; and a reference bit line connected to the reference memory cell. When a word line is selected, the potential of normal bit lines and of reference bit line changes according to the charge on the storage capacitors and on the reference capacitor. A current mirror circuit is also provided, which has a first transistor drain of which is connected to the reference bit line and second transistors drains of which are respectively connected to normal bit lines, the gates of the first and second transistors being connected in common to the reference bit line. Thus even though the capacitance values of ferroelectric capacitors is scattered, the scattering in bit line potentials during read operations can be prevented.

REFERENCES:
patent: 6990005 (2006-01-01), Saito
patent: 2004/0090814 (2004-05-01), Takahashi
patent: 1 304 701 (2003-04-01), None
patent: 1 600 979 (2005-11-01), None
patent: 2001-118380 (2001-04-01), None
patent: 2002-100183 (2002-04-01), None

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