Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2007-03-20
2007-03-20
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S189070, C365S230060
Reexamination Certificate
active
11202230
ABSTRACT:
Provided is a semiconductor memory, comprising: a voltage converting circuit which voltage-converts a resistance difference between a first and a second resistance elements; a voltage comparing circuit which outputs an output corresponding to the voltage conversion; a latch circuit for holding the output of the voltage comparing circuit; and a switch circuit which cuts and connects the voltage converting circuit and the voltage comparing circuit.
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patent: 6297624 (2001-10-01), Mitsui et al.
patent: 6384664 (2002-05-01), Hellums et al.
Alavi, et al., “A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process,” IEEE, 1997.
Agata Masashi
Kawasaki Toshiaki
Nishihara Ryuji
Shirahama Masanori
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