Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2007-03-27
2007-03-27
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S189090, C365S210130
Reexamination Certificate
active
10901260
ABSTRACT:
A semiconductor memory has a plurality of memory cells having a single-ended digit structure. When reading data from a selected memory cell, a digit voltage outputted from the selected memory cell is compared with a reference voltage. If the digit voltage is higher, it is outputted as High level; if the digit voltage is lower, it is outputted as Low level. The semiconductor memory further has a plurality of dummy cells with different current capacity to generate a plurality of different levels of reference voltages.
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Lam David
McGinn IP Law Group PLLC
NEC Electronics Corporation
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