Semiconductor memory

Static information storage and retrieval – Read/write circuit – Including signal comparison

Reexamination Certificate

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C365S189090, C365S210130

Reexamination Certificate

active

10901260

ABSTRACT:
A semiconductor memory has a plurality of memory cells having a single-ended digit structure. When reading data from a selected memory cell, a digit voltage outputted from the selected memory cell is compared with a reference voltage. If the digit voltage is higher, it is outputted as High level; if the digit voltage is lower, it is outputted as Low level. The semiconductor memory further has a plurality of dummy cells with different current capacity to generate a plurality of different levels of reference voltages.

REFERENCES:
patent: 5592428 (1997-01-01), Harrand et al.
patent: 6201742 (2001-03-01), Hirai et al.
patent: 6301156 (2001-10-01), Kurosaki
patent: 6512714 (2003-01-01), Hanzawa et al.
patent: 6590820 (2003-07-01), Nakagawa
patent: 6809977 (2004-10-01), Richards
patent: 6822897 (2004-11-01), Ishikawa
patent: 3-73493 (1991-03-01), None

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