Semiconductor memory

Details Semiconductor memory Semiconductor memory

2006-08-15

2006-08-15

Tran, Michael (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C327S108000

Reexamination Certificate

active

07092304

ABSTRACT:
A dummy capacitor drive potential VDC is given to one electrode of a dummy capacitor, and a reference potential for determining a data value of a memory cell is generated in the other electrode thereof. A potential generator circuit for generating the potential VDC is composed of a BGR circuit outputting a potential VBGRTEMP having temperature dependency, and resistors R3and R4, which are series-connected between an output terminal of the BGR circuit and a ground point. The potential VDC is output from a connection point of the resistors R3and R4. Temperature dependency of the potential VDC is adjusted based on a resistance ratio of resistors R1-1, R1-2and R2, and the absolute value is adjusted based on a resistance ratio of resistors R3and R4.

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patent: 2003-68070 (2003-03-01), None
U.S. Appl. No. 10/291,610, filed Nov. 12, 2002, Ogiwara et al.

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