Semiconductor memory

Details Semiconductor memory Semiconductor memory

2006-11-28

2006-11-28

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S203000, C365S230050, C365S202000

Reexamination Certificate

active

07142465

ABSTRACT:
A semiconductor memory in which a drop in the potential of a bit line due to coupling capacitance at the time of writing data can be restored in a space-saving way without increasing a load at read time. In response to a selection signal, a selection circuit selects complementary bit lines and connects the selected complementary bit lines to write data bus lines or read data bus lines. When data is written, a voltage boosting circuit section selects a read data bus line connected to a bit line of the pair of complementary bit lines located opposite to a bit line the potential of which is decreased on the basis of the data to be written and raises the potential of the selected read data bus line. As a result, a potential level which has dropped due to coupling capacitance between the bit lines can be restored.

REFERENCES:
patent: 5875139 (1999-02-01), Semi
patent: 6130846 (2000-10-01), Hori et al.
patent: 10-112185 (1998-04-01), None

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