Semiconductor memory

Details Semiconductor memory Semiconductor memory

2008-01-01

2008-01-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189090, C365S225700

Reexamination Certificate

active

07315481

ABSTRACT:
When it is judged that real bit lines connected to real memory cells are liable to be connected to adjacent circuit elements to be electrically short-circuited, dummy bit lines are connected to voltage lines which supply voltages to the circuit elements. For example, the dummy bit lines are directly connected to a negative voltage line via a connection wiring line. Alternatively, the dummy bit lines are selectively connected to any one of internal voltage lines. Even when the dummy bit lines are connected to the adjacent circuit elements to be electrically short-circuited, a leak can be prevented from occurring between the dummy bit lines and the circuit elements. Since the leak can be prevented, internal voltage generators can be prevented from uselessly operating and a standby current can be prevented from increasing. As a result, the yield of the semiconductor memory can be enhanced.

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