Semiconductor memory

Details Semiconductor memory Semiconductor memory

2011-08-02

2011-08-02

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000

Reexamination Certificate

active

07990752

ABSTRACT:
A semiconductor memory of an aspect of the present invention including a main bit line, a first and second sub-bit line, a first resistive memory element which has a first terminal being connected with the main bit line, a first select transistor which has one end of a first current path being connected with the second terminal of the first resistive memory element and the other end of the first current path being connected with the first sub-bit line, a second resistive memory element which has a third terminal being connected with the main bit line, and a second select transistor which has one end of a second current path being connected with the fourth terminal of the second resistive memory element and the other end of the second current path being connected with the second sub-bit line.

REFERENCES:
patent: 2006/0158919 (2006-07-01), Inaba
patent: 2007/0091670 (2007-04-01), Hidaka
patent: 2008/0239782 (2008-10-01), Asao et al.
patent: 2008/0308887 (2008-12-01), Asao et al.
M. Hosomi et al., “A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM” IEDM Tech., 2005, pp. 473-476.
Explanation of Non-English Language Reference(s).

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