Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2011-07-12
2011-07-12
Auduong, Gene N (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S051000, C365S063000
Reexamination Certificate
active
07978555
ABSTRACT:
Dummy memory cells are disposed on an outside of real memory cells positioned on a peripheral part of a matrix. First contacts coupling between two wiring layers laminated on a semiconductor substrate are disposed around each of the real and dummy memory cells, and are shared by an adjacent real or dummy memory cell. Number of the first contacts disposed in each of the dummy memory cells is set to be smaller than number of the first contacts disposed in each of the real memory cells. Accordingly, even when a well region is not formed normally due to a variation in manufacturing conditions, it is possible to prevent an abnormal power supply current from being flown into the dummy memory cells, and an occurrence of latch up can be prevented.
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Arent & Fox LLP
Auduong Gene N
Fujitsu Semiconductor Limited
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