Semiconductor memory

Details Semiconductor memory Semiconductor memory

1986-12-15

1987-11-24

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365182, 365190, 365186, G11C 1140

Patent

active

047093536

ABSTRACT:
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the data lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

REFERENCES:
patent: 4578781 (1986-03-01), Ogawa et al.
patent: 4584672 (1986-04-01), Schutz et al.
patent: 4625300 (1986-11-01), McElroy
patent: 4627033 (1986-12-01), Hyslop et al.

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