Semiconductor memory

Details Semiconductor memory Semiconductor memory

1998-03-24

1999-12-28

Nelms, David

Static information storage and retrieval

Read/write circuit

For complementary information

365207, G11C 700

Patent

active

060090243

ABSTRACT:
A semiconductor memory of the present invention includes: a plurality of memory cells; a pair of local bit lines connected to the plurality of memory cells; a local sense amplifier for amplifying a potential difference between the pair of local bit lines; a pair of global bit lines electrically connected to the pair of local bit lines through a switch; and a global sense amplifier for amplifying a potential difference between the pair of global bit lines, wherein the local sense amplifier includes a plurality of transistors, each of the plurality of transistors included in the local sense amplifier is a transistor of a first conductivity type, and the global sense amplifier includes a transistor of a second conductivity type different from the first conductivity type.

REFERENCES:
patent: 4545037 (1985-10-01), Nakano et al.
patent: 5392240 (1995-02-01), Muraoka
patent: 5491655 (1996-02-01), Hirose et al.

Affiliated with

Also associated with

Rating

Semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2386760