Semiconductor memory

Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge

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Details

365207, 3652335, G11C 700

Patent

active

051611236

ABSTRACT:
A semiconductor memory comprising a memory cell comprising a MOS transistor connected between a bit line and a reference potential terminal; a sense amplifier coupled to the bit line for reading out a potential on the bit line, the sense amplifier comprising an inverter having an input and output connected to each other via a switch; and a circuit element interposed between the bit line and the sense amplifier operative to only transmit bit line potential changes in a direction of the reference potential.

REFERENCES:
patent: 4461965 (1984-07-01), Chin
patent: 4477884 (1984-10-01), Iwahashi et al.
patent: 4903235 (1990-02-01), Kubota

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