Semiconductor memory

Details Semiconductor memory Semiconductor memory

1992-11-25

1996-03-19

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Capacitors

365104, 257296, 257298, 257300, 257301, 257304, G11C 1124, G11C 1140

Patent

active

055008151

ABSTRACT:
A semiconductor memory cell comprises a first cascade gate, formed on a semiconductor substrate, having its end connected to a first node, and a plurality of MOS transistors which are connected in cascade, a plurality of data storage capacitors, formed on the semiconductor substrate, each of which has its end connected to that end of a corresponding one of the MOS transistors which is opposite to the first node, and a device isolation MOS transistor formed between the memory cell and another semiconductor memory cell which are arranged side by side on the semiconductor substrate.

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