Semiconductor memory

Static information storage and retrieval – Read/write circuit – Testing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36523006, G11C 2900

Patent

active

052650570

ABSTRACT:
There is provided a semiconductor memory including a plurality of word lines, a plurality of bit lines intersecting the word lines, and a memory cell array having memory cells arranged at respective intersections of the word lines and bit lines. Word line selecting circuits select the word lines in accordance with an address signal and word line driving circuits are connected to the word lines for driving selected word lines. Selective stress applying circuitry selectively applies stress, during a stress test, to word lines in one of a plurality of word line groups into which all word lines are classified. The selective stress applying circuits includes an arrangement of MOS transistors and pads for applying stress to a word line group during the stress test.

REFERENCES:
patent: 4349895 (1982-09-01), Isogai
patent: 4951259 (1990-08-01), Sato
patent: 4972372 (1990-11-01), Ueno
patent: 5086413 (1992-02-01), Tsuboi
patent: 5161121 (1992-11-01), Cho

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1855041

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.