Static information storage and retrieval – Read/write circuit – Testing
Patent
1995-07-06
1997-05-20
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Testing
36518901, 36518907, 36518905, G11C 1134
Patent
active
056318707
ABSTRACT:
A semiconductor memory comprising memory cells, a write buffer, a write inversion gate, a data input terminal, and four write data buses 1-4. The write buffer and the write inversion gate place onto two write data buses 1 and 3 the data input through the data input terminal. The inverted data of the input data is output onto two other write data buses 2 and 4. This causes alternately different data to be written to four contiguous memory cells. The scheme permits detection of a cell fault caused by interference between contiguous memory cells.
REFERENCES:
patent: 5400342 (1995-03-01), Matsumura et al.
"A 90NS 1MB DRAM With Multi-Bit Test Mode", Kumanoya et al., ISSCC85 Digest of Technical Papers, pp. 240-241.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Viet Q.
LandOfFree
Semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1729253