Semiconductor memories

Details Semiconductor memories Semiconductor memories

2005-09-27

2005-09-27

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S299000, C257S300000, C257S305000

Reexamination Certificate

active

06949782

ABSTRACT:
A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

REFERENCES:
patent: 4803664 (1989-02-01), Itoh
patent: 5492851 (1996-02-01), Ryou
patent: 5646903 (1997-07-01), Johnson
patent: 5977591 (1999-11-01), Fratin et al.

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