Semiconductor materials

Details Semiconductor materials Semiconductor materials

1980-09-05

1982-07-13

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG66, 156DIG70, 75 62, C30B 2940

Patent

active

043393020

ABSTRACT:
A Group III element Q selected from gallium, indium and thallium containing a Group VI element X selected from oxygen, sulphur, selenium and tellurium as an impurity can be purified by adding, to molten Q, an element M capable of forming with X a stable solid compound substantially insoluble in liquid Q. The stable solid compound can be separated and the purified Q used in the epitaxial growth of a semiconductor material such as indium phosphide. Alternatively, in a process for the epitaxial growth of a semiconductor compound of Q in molten Q, X can be removed in situ by the addition of a suitable element of the M-type.

REFERENCES:
patent: 2898278 (1959-08-01), Plust
patent: 3093475 (1963-06-01), Dryer, Jr.
"Pair Spectra", Dean et al., published in J. of Applied Physics., vol. 41, Jul. 1970, pp. 3475-3479.
Minden, "Intermetallic Semiconductors", published in Semiconductor Products, Feb. 1959, pp. 30-42.

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