Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2005-03-29
2005-03-29
Stein, Stephen (Department: 1775)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S704000
Reexamination Certificate
active
06872455
ABSTRACT:
A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.
REFERENCES:
patent: 4939043 (1990-07-01), Biricik et al.
patent: 5329257 (1994-07-01), Ismail
patent: 6133120 (2000-10-01), Miyajima et al.
patent: 6238941 (2001-05-01), Dutartre et al.
patent: 6498078 (2002-12-01), Sadigh et al.
patent: 6617228 (2003-09-01), Sadigh et al.
patent: 6627522 (2003-09-01), Sadigh et al.
patent: 6663708 (2003-12-01), Morita et al.
Asta Mark
Caturla Maria-Jose
Diaz de la Rubia Tomas
Foad Majeed
Giles Martin
Stein Stephen
The Regents of the University of California
Thompson Alan H.
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