Semiconductor material, a semiconductor device using the same, a

Details Semiconductor material, a semiconductor device using the same, a Semiconductor material, a semiconductor device using the same, a

1996-03-18

1998-10-20

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438733, 117 7, H01L 2184

Patent

active

058245740

ABSTRACT:
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.

REFERENCES:
patent: 4727044 (1988-02-01), Yamazaki
patent: 5147826 (1992-09-01), Liu et al.
patent: 5447117 (1995-09-01), Yonehara et al.
patent: 5501989 (1996-03-01), Takayama et al.

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