Semiconductor manufacturing process

Details Semiconductor manufacturing process Semiconductor manufacturing process

2011-07-12

2011-07-12

Alanko, Anita K (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S710000, C438S714000, C438S720000, C438S723000, C438S735000, C438S906000, C438S963000, C134S001200, C216S046000, C216S067000

Reexamination Certificate

active

07977244

ABSTRACT:
Disclosed is a semiconductor manufacturing process, in which a fluorine radical-containing plasma is used to etch a hard mask and a layer therebeneath; and a treatment is carried out using a gas reactive to fluorine radicals for reacting with residual fluorine radicals to form a fluorine-containing compound and remove it. Thus, precipitates formed by the reaction of fluorine radicals and titanium components existing in the hard mask to cause a process defect can be avoided.

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