Semiconductor manufacturing method and semiconductor device

Details Semiconductor manufacturing method and semiconductor device Semiconductor manufacturing method and semiconductor device

2005-08-15

2010-02-16

Gebremariam, Samuel A (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S300000, C257SE21394, C257SE21615, C257SE21458, C257SE29049, C257SE29067, C257SE29299, C257SE29256

Reexamination Certificate

active

07662679

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a mask layer on a first-conductivity-type semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a projecting semiconductor layer, forming a first insulating layer on the semiconductor substrate to cover a lower portion of the projecting semiconductor layer, doping a first-conductivity-type impurity into the first insulating layer, thereby forming a high-impurity-concentration layer in the lower portion of the projecting semiconductor layer, forming gate insulating films on side surfaces of the projecting semiconductor layer which upwardly extend from an upper surface of the first insulating layer, and forming a gate electrode on the gate insulating films and on the first insulating film.

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Taurus Process & Design; Multi-dimensional Process and Device Modeling Program; Version 2001.4 User's Manual; Avant Corporation; TCAD Business Unit.
Masaki Kondo et al., “A FinFET Design Based on Three-Dimensional Process and Device Simulations”, SISPAD, IEEE 2003, pp. 179-182.

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