Semiconductor manufacturing method

Details Semiconductor manufacturing method Semiconductor manufacturing method

2006-06-01

2010-06-15

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S463000, C438S464000

Reexamination Certificate

active

07737001

ABSTRACT:
In a stealth dicing process for a semiconductor device with a low dielectric constant layer, the occurrence of poor appearance such as a defective shape or discoloration in the layer is reduced or prevented as follows. A low dielectric constant layer is formed in an interlayer insulating layer formed on the main surface of a semiconductor wafer. A laser beam is focused on the inside of the wafer from the reverse side of the wafer in order to form modified regions selectively. Each modified region is formed in a way to contact, or partially get into, the low dielectric constant layer. In this formation process, the semiconductor wafer is cooled by a cooling element. This reduces or prevents discoloration of the low dielectric constant layer which might occur due to the heat of a laser beam.

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Chinese Official Action dated Apr. 24, 2009, for Application No. 200610085089.1.

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