Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-23
2011-08-23
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C204S275100, C427S240000, C427S299000, C427S352000, C427S421100, C427S427000
Reexamination Certificate
active
08003509
ABSTRACT:
A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
REFERENCES:
patent: 2004/0182277 (2004-09-01), Inoue et al.
patent: 2006/0113185 (2006-06-01), Kuriyama et al.
patent: 2007-177324 (2007-07-01), None
Japanese Office action for 2008-098367 dated Apr. 20, 2010.
Hara Kenichi
Iwashita Mitsuaki
Orii Takehiko
Tanaka Takashi
Toshima Takayuki
Landau Matthew C
McCall Shepard Sonya D
Pearne & Gordon LLP
Tokyo Electron Limited
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