Semiconductor manufacturing apparatus and pattern formation...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making printing plates

Reexamination Certificate

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C430S322000, C430S331000, C355S030000, C355S053000, C359S649000, C359S656000

Reexamination Certificate

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10983655

ABSTRACT:
A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.

REFERENCES:
patent: 6980277 (2005-12-01), Sewell
patent: 2006/0098297 (2006-05-01), Van Peski et al.
patent: 06-124873 (1994-05-01), None
patent: 2001-316863 (2001-11-01), None
patent: 2003-181260 (2003-07-01), None
patent: 2003-306015 (2003-10-01), None
patent: 2004-282023 (2004-10-01), None
patent: WO 99/49504 (1999-09-01), None
M. Switkes, et al. “Immersion lithography at 157nm”, J. Vac. Sci. Technol., B 19(6), Nov./Dec. 2001, pp. 2353-2356.
Notice of Reasons for Rejection dated May 30, 2006.

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