Semiconductor-manufacturing apparatus

Details Semiconductor-manufacturing apparatus Semiconductor-manufacturing apparatus

2000-10-20

2008-07-01

Kackar, Ram N. (Department: 1792)

Coating apparatus

Gas or vapor deposition

With treating means

C118S728000, C118S730000, C156S345510, C156S345520, C156S345550, C219S444100

Reexamination Certificate

active

07393417

ABSTRACT:
On a wafer holding area50on the upper surface of a susceptor22,a wafer W is supported by a wafer support54such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface52.A projection58that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface52.At this time, the heating condition for the wafer W by the susceptor22is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

REFERENCES:
patent: 5242501 (1993-09-01), McDiarmid
patent: 5493987 (1996-02-01), McDiarmid et al.
patent: 5527393 (1996-06-01), Sato et al.
patent: 5645646 (1997-07-01), Beinglass et al.
patent: 5800622 (1998-09-01), Takemi et al.
patent: 0 766 289 (1997-04-01), None
patent: 61-215289 (1986-09-01), None
patent: 7-058040 (1995-03-01), None
patent: 9-125251 (1997-05-01), None
EP Communication dated Oct. 29, 2002.
EP Examination Report for EP 969 956.2-2119, dated Mar. 31, 2003.

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