Semiconductor magnetic memory integrating a magnetic...

Details Semiconductor magnetic memory integrating a magnetic... Semiconductor magnetic memory integrating a magnetic...

2009-01-27

2010-12-14

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S158000, C365S185030, C365S185050, C365S185170

Reexamination Certificate

active

07852668

ABSTRACT:
A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

REFERENCES:
patent: 6034887 (2000-03-01), Gupta et al.
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6522573 (2003-02-01), Saito et al.
patent: 6545900 (2003-04-01), Bohm et al.
patent: 6570787 (2003-05-01), Wang et al.
patent: 6573586 (2003-06-01), Sakata et al.
patent: 6597618 (2003-07-01), Zheng et al.
patent: 6754100 (2004-06-01), Hayakawa
patent: 6842368 (2005-01-01), Hayakawa
patent: 6845038 (2005-01-01), Shukh
patent: 6849464 (2005-02-01), Drewes
patent: 6885582 (2005-04-01), Sharma
patent: 6944049 (2005-09-01), Hoenigschmid et al.
patent: 6977839 (2005-12-01), Sharma
patent: 6992923 (2006-01-01), Kim et al.
patent: 7020010 (2006-03-01), Moriyama et al.
patent: 7486550 (2009-02-01), Banerjee et al.
patent: 2003/0214842 (2003-11-01), Jeong
patent: 2004/0100817 (2004-05-01), Subramanian et al.
Yin, Cheng-Kuan, et al. “New Magnetic Flash Memory with FePt Magnetic Floating Gate”Japanese Journal of Applied Physicsvol. 45, No. 4B, 2006, pp. 3217-3221.

Affiliated with

Also associated with

Rating

Semiconductor magnetic memory integrating a magnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor magnetic memory integrating a magnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor magnetic memory integrating a magnetic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4153748