Semiconductor light generating device

Details Semiconductor light generating device Semiconductor light generating device

2007-11-13

2007-11-13

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S101000, C257S102000, C257SE33029

Reexamination Certificate

active

11032230

ABSTRACT:
The semiconductor light generating device comprises a light generating region3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer5and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer7. In this semiconductor light generating device, the light generating region3is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer5is doped with a p-type dopant, such as magnesium, and is provided on the light generating region3. The second AlX2Ga1-X2N semiconductor layer7has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer7is provided between the light generating region3and the first AlX1Ga1-X1N semiconductor layer5.

REFERENCES:
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 7012283 (2006-03-01), Tsuda et al.
patent: 2003/0116767 (2003-06-01), Kneissl et al.
patent: 2005/0127391 (2005-06-01), Yanamoto
patent: 2005/0135453 (2005-06-01), Kneissl et al.
patent: 2001-119068 (2001-04-01), None
patent: 2001-237455 (2001-08-01), None
Chinese Office Action, with English translation, issued in Chinese Patent Application No. CN 200510004321.X, mailed Jul. 6, 2007.

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