Semiconductor light emitting element with In GaAlP active layer

Details Semiconductor light emitting element with In GaAlP active layer Semiconductor light emitting element with In GaAlP active layer

1996-02-12

1998-01-20

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 94, 257103, H01L 3300

Patent

active

057104409

ABSTRACT:
A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part comprising an n-type cladding layer composed of an InGaAlP compound semiconductor material, an active layer and a p-type cladding layer formed in that order from the substrate side by double heterojunction, wherein said semiconductor light emitting element satisfies at least one of the following conditions:

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5103270 (1992-04-01), Sato et al.
patent: 5300791 (1994-04-01), Chen et al.

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