Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-03-01
2011-03-01
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33056
Reexamination Certificate
active
07897990
ABSTRACT:
A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 μm and the center-line average roughness Ra of the surface is no more than 0.1 μm. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.
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Amoh Teruo
Fukuda Hiroshi
Higaki Kenjiro
Ishidu Sadamu
Tsuzuki Yasushi
Belousov Alexander
Gozzi Justine A.
Sartori Michael A.
Smith Bradley K
Sumitomo Electric Industries Ltd.
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