Semiconductor light emitting element, manufacturing method...

Details Semiconductor light emitting element, manufacturing method... Semiconductor light emitting element, manufacturing method...

2007-07-31

2007-07-31

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S044000, C438S094000, C438S116000, C257S094000, C257S095000, C257S098000, C257SE33001

Reexamination Certificate

active

10512131

ABSTRACT:
A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

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