Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-08-08
2006-08-08
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S190000
Reexamination Certificate
active
07087930
ABSTRACT:
A semiconductor light emitting element that is made by using the lateral growth function of semiconductor crystal while providing an ELO mask on a crystal growth surface of a crystal growth substrate. At least part of a sidewall of the ELO mask is provided with an inclined plane that is inclined to the crystal growth surface such that the semiconductor crystal to be formed on the ELO mask substantially has no void.
REFERENCES:
patent: 6312967 (2001-11-01), Ikeda
patent: 6348096 (2002-02-01), Sunakawa et al.
patent: 6368733 (2002-04-01), Nishinaga
patent: 6468882 (2002-10-01), Motoki et al.
patent: 6469320 (2002-10-01), Tanabe et al.
patent: 6716724 (2004-04-01), Iyechika et al.
patent: 6809351 (2004-10-01), Kuramoto et al.
patent: 11-130597 (1999-05-01), None
patent: 2000-021789 (2000-01-01), None
patent: 2000-357663 (2000-12-01), None
patent: 2001-160657 (2001-06-01), None
patent: 2002-164296 (2002-06-01), None
patent: 2002-280609 (2002-09-01), None
Yoshiaki Honda, et al., “Transmission Electron Microscopy Investigation of Dislocations in GaNLayer Grown by Facet-Controlled Epitaxial Lateral Overgrowth”, Japanese Journal of Applied Physics, vol. 40, Apr. 1, 2001, pp. L309-L312.
Hiromitsu Mizutani, et al., “Reduction of dislocation density in GaN using FACELO (Facet Controlled Epitaxial Lateral Overgrowth)”, Technical Report of IEICE, ED2000-22, CPM2000-7, SDM2000-22 (May 2000), pp. 35-40.
Kazuyuki Tadatomo, et al., “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics, vol. 40, Jun. 15, 2001, pp. L583-L585.
Motokazu Yamada, et al., “InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode”, Japanese Journal of Phsysics, vol. 41, Dec. 15, 2002, pp. L1431-L1433.
Hayashi Toshimasa
Ito Jun
Nishijima Kazuki
Senda Masanobu
McGinn IP Law Group PLLC
Menz Douglas M.
Smith Bradley K.
Toyodaa Gosei Co., Ltd.
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